Efficient utilization of memory die area

ABSTRACT

Methods, systems, and apparatus that support efficient utilization of die area for cross-point memory architecture are described. A memory array may include active memory cells overlying each portion of the substrate that includes certain types of support circuitry, such as decoders and sense amplifiers. Boundary tiles, which may be portions of an array having a different configuration from other portions of the array, may be positioned on one side of an array of memory tiles. The boundary tiles may include support components to access both memory cells of neighboring memory tiles and memory cells overlying the boundary tiles. Column lines and column line decoders may be integrated as part of a boundary tile. Access lines, such as row lines may be truncated or omitted at or near borders of the memory portion of the memory device.

BACKGROUND

The following relates generally to memory devices and more specificallyto efficient utilization of die area for three-dimensional cross-pointarchitecture.

Memory devices are widely used to store information in variouselectronic devices such as computers, wireless communication devices,cameras, digital displays, and the like. Information is stored byprogramming different states of a memory device. For example, binarydevices have two states, often denoted by a logic “1” or a logic “0.” Inother systems, more than two states may be stored. To access the storedinformation, the electronic device may read, or sense, the stored statein the memory device. To store information, the electronic device maywrite, or program, the state in the memory device.

Multiple types of memory devices exist, including magnetic hard disks,random access memory (RAM), dynamic RAM (DRAM), synchronous dynamic RAM(SDRAM), ferroelectric RAM (FeRAM), magnetic RAM (MRAM), resistive RAM(RRAM), read only memory (ROM), flash memory, phase change memory (PCM),and others. Memory devices may be volatile or non-volatile. Non-volatilememory, e.g., FeRAM and PCM, may maintain their stored logic state forextended periods of time even in the absence of an external powersource. Volatile memory devices, e.g., DRAM, may lose their stored stateover time unless they are periodically refreshed by an external powersource. Improving memory devices may include increasing memory celldensity, increasing read/write speeds, increasing reliability,increasing data retention, reducing power consumption, or reducingmanufacturing costs, among other metrics.

FeRAM may use similar device architectures as volatile memory but mayhave non-volatile properties due to the use of a ferroelectric capacitoras a storage device. FeRAM devices may thus have improved performancecompared to other non-volatile and volatile memory devices. PCM orchalcogenide-material-based memories may be non-volatile and may offerimproved read/write speeds and endurance compared to other memorydevices. PCM or chalcogenide-material-based memories may also offerincreased memory cell density capabilities. For example,three-dimensional memory arrays employing FeRAM, PCM, orchalcogenide-material-based memories may be possible. However, in somethree-dimensional architectures, regions of the memory device may bededicated to support circuitry and may be exclusive of memory cells.Such areas may increase the physical dimensions of the memory devicewithout increasing the capacity of the memory device.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure herein refers to and includes the following figures:

FIG. 1 illustrates an example of a memory device that supports efficientutilization of die area for cross-point architecture in accordance withembodiments of the present disclosure.

FIG. 2 illustrates an example of a memory device having athree-dimensional array of memory cells that supports efficientutilization of die area for cross-point architecture in accordance withembodiments of the present disclosure.

FIG. 3 illustrates an example of a memory array that supports efficientutilization of die area for cross-point architecture in accordance withembodiments of the present disclosure.

FIG. 4 illustrates an example of a memory device that supports efficientutilization of die area for cross-point architecture in accordance withembodiments of the present disclosure.

FIG. 5 illustrates an example of a cross-section of the memory device ofFIG. 4 along line 5-5.

FIG. 6 illustrates an example of memory tile configurations that supportefficient utilization of die area for cross-point architecture inaccordance with embodiments of the present disclosure.

FIG. 7 illustrates an example of a memory tile of a group of memorytimes that supports efficient utilization of die area for cross-pointarchitecture in accordance with embodiments of the present disclosure.

FIG. 8 illustrates examples of boundary tile configurations that supportefficient utilization of die area for cross-point architecture inaccordance with embodiments of the present disclosure.

FIG. 9 illustrates an example of a memory device that supports efficientutilization of die area for cross-point architecture in accordance withembodiments of the present disclosure.

FIG. 10 illustrates an example of a cross-section of the memory deviceof FIG. 9 along line 10-10.

FIG. 11 illustrates an example of a boundary tile configuration thatsupports efficient utilization of die area for cross-point architecturein accordance with embodiments of the present disclosure.

FIG. 12 illustrates an example of a memory portion that supportsefficient utilization of die area for cross-point architecture inaccordance with embodiments of the present disclosure.

FIG. 13 illustrates an example of a memory portion that supportsefficient utilization of die area for cross-point architecture inaccordance with embodiments of the present disclosure.

FIG. 14 illustrates an example of a memory portion that supportsefficient utilization of die area for cross-point architecture inaccordance with embodiments of the present disclosure.

FIG. 15 illustrates an example of a memory portion that supportsefficient utilization of die area for cross-point architecture inaccordance with embodiments of the present disclosure.

FIGS. 16 through 17 show block diagrams of a device that supportsefficient utilization of die area for cross-point architecture inaccordance with embodiments of the present disclosure.

FIG. 18 illustrates a block diagram of a system including a memorycontroller that supports efficient utilization of die area forcross-point architecture in accordance with embodiments of the presentdisclosure.

FIG. 19 illustrates a method that supports efficient utilization of diearea for cross-point architecture in accordance with embodiments of thepresent disclosure.

DETAILED DESCRIPTION

Some memory devices are built using an cross-point architecture having a“quilt” pattern. In some examples, the architecture may be atwo-dimensional cross-point architecture. In some examples, thearchitecture may be a three-dimensional cross-point architecture. As isdescribed with more detail below within quilt architectures, the memorydevice may be configured of modules called memory tiles. The memorydevice may be formed by arranging the memory tiles in an array. Eachmemory tile may include a similar configuration of components as theother memory tiles. Memory tiles may include a substrate layer thatincludes support components such as amplifiers and decoders and memorycells positioned above the substrate layer.

Because memory devices are configured to be assembled in an array ofmemory tiles, memory cells in a memory tile may be accessible usingsupport components (e.g., decoders) positioned in a neighboring memorytile. For instance, the cells of each tile within the quilt architecturemay be accessed by decoders underlying adjacent tiles. So a given cellmay be accessed from decoders that are outside of the footprint of thetile of which that cell is a party. Consequently, some memory cellspositioned near the border of the array of memory tiles may not beaccessible.

To ensure memory cells positioned above memory tiles are accessible,portions of the array near the border may have a different architecture.These portions may be referred to as boundary tiles and may bepositioned adjacent to some memory tiles near the border of the array ofmemory tiles. For example, boundary tiles may be positioned on the firstside of the array of memory tiles and positioned on a second side of thearray of memory tiles opposite the first side. Boundary tiles mayinclude support components for accessing memory cells of neighboringmemory tiles. For example, boundary tiles may include decoders andamplifiers. In some examples, boundary tiles may not include memorycells positioned above the support components.

Techniques are described herein that support efficient utilization ofdie area for cross-point architecture, which may include reducing thesize of the die area as compared to legacy configurations by reducingthe area of boundary tiles and/or eliminating at least some boundarytiles in a quilt architecture memory device. As used herein, a portionor cut of a substrate containing a memory array or circuit may bereferred to as a die. Boundary tiles may be positioned on only one sideof an array of memory tiles. Memory cells may be positioned above theboundary tiles. The boundary tiles may include support components toaccess both memory cells of neighboring memory tiles and memory cells ofthe boundary tiles. Column lines and column line decoders may beintegrated as part of a boundary tile. Access lines, such as row linesmay be truncated or omitted at or near borders of the memory portion ofthe memory device. By positioning boundary tiles on only one side of anarray of memory tiles, area devoted to support components may bereduced. In addition, by positioning memory cells above the boundarytiles, the number of accessible memory cells in the memory device may beincreased, in some cases.

Features of the disclosure introduced above are further described belowin the context of a memory array. Specific examples are then describedfor memory devices and memory portions that relate to reducing the diearea by removing boundaries in a quilt architecture. These and otherfeatures of the disclosure are further illustrated by and described withreference to apparatus diagrams, system diagrams, and flowcharts thatrelate to reducing the die area by removing boundaries in a quiltarchitecture.

FIG. 1 illustrates an example of a memory device 100 that supportsefficient utilization of die area for cross-point architecture. In theillustrative example of FIG. 1, the memory device 100 includes atwo-dimensional memory array 102. Memory device 100 may also be referredto as an electronic memory apparatus. Memory device 100 includes memorycells 105 that are programmable to store different states. FIG. 1 is anillustrative schematic representation of various components and featuresof the memory device 100. As such, it should be appreciated that thecomponents and feature of the memory device 100 are shown to illustratefunctional interrelationships, not their actual physical positionswithin the memory device 100. FIG. 1 also shows an alternative schematicoption of arranging sense component 126 (in a dashed box). An ordinaryperson skilled in the art would appreciate that sense component may beassociated either with column decoder or row decoder without losing itsfunctional purposes.

Each memory cell 105 may be programmable to store two states, denoted asa logic 0 and a logic 1. In some cases, memory cell 105 is configured tostore more than two logic states. A memory cell 105 may include acapacitor or other memory storage component to store a chargerepresentative of the programmable states; for example, a charged anduncharged capacitor may represent two logic states, respectively, or achalcogenide material may represent different states depending on itscrystalline structure or other properties, for example.

The memory device 100 may be arranged using a quilt architecture. In aquilt architecture, tiles with similar configurations of components arearranged in an array. Memory devices built in such a manner may beexpanded or contracted by adding or reducing tiles. The tiles may bebuilding blocks for the memory device 100. Supporting circuitry (notshown) for the memory device may be positioned beneath the arrays ofmemory cells in a tile. As used herein a quilt architecture may refer toa memory array comprising a plurality of memory modules. For example, amemory device having a quilt architecture may comprise a repeatingpattern of memory modules.

In some examples of quilt architecture, some memory cells positionedabove a first tile may be accessed using support circuitry (not shown)positioned in a neighboring tile. Consequently, at the borders of thearrays of memory cells, some memory cells may not be accessible. Toaddress these inaccessibility issues, boundary tiles may be positionedbeyond the border of the array of memory cells to ensure all memorycells of the tiles are accessible. In some examples, memory cells may bepositioned above the boundary tiles.

Operations such as reading and writing, which may be referred to asaccess operations, may be performed on memory cells 105 by activating orselecting the appropriate combination of common conductive lines, suchas, for example, word line 110 and digit line 115. Word lines 110 mayalso be referred to as access lines or row lines and digit lines 115 mayalso be referred to as bit lines or column lines. In some examples, thesense component may be coupled to either the word lines or the rowlines. Word lines 110 and bit lines 115 may be perpendicular (or nearlyperpendicular) to one another to create an array. References to wordlines and bit lines, or their analogues are interchangeable without lossof understanding or operation. Depending on the type of memory device(e.g., FeRAM, RRAM, etc.) other access lines may be present (not shown),such as plate lines, for example. It should be appreciated that theexact operation of the memory device may be altered based on the type ofmemory device and/or the specific access lines used in the memorydevice.

Activating or selecting a word line 110 or a digit line 115 may includeapplying a voltage to the respective line. Word lines 110 and digitlines 115 are made of conductive materials. For example, word lines 110and digit lines 115 may be made of metals (such as copper, aluminum,gold, tungsten, etc.), metal alloys, other conductive materials, or thelike. By activating one word line 110 and one digit line 115 (e.g.,applying a voltage to the word line 110 or digit line 115), a singlememory cell 105 may be accessed at their intersection. Accessing thememory cell 105 may include reading or writing the memory cell 105.

In some architectures, the logic storing device of a cell, e.g., acapacitor, may be electrically isolated from the digit line by aselection component. The word line 110 may be connected to and maycontrol the selection component. For example, the selection componentmay be a transistor and the word line 110 may be connected to the gateof the transistor. Activating the word line 110 results in an electricalconnection or closed circuit between the capacitor of a memory cell 105and its corresponding digit line 115. The digit line may then beaccessed to either read or write the memory cell 105.

Accessing memory cells 105 may be controlled through a row decoder 120and a column decoder 130. Row decoder 120, sense component, 125, andcolumn decoder 130 may be configured under memory cells 105. Asdiscussed below, these components may occupy portions of a substrateregion underlying the array. In some examples, a row decoder 120receives a row address from the memory controller 140 and activates theappropriate word line 110 based on the received row address; theappropriate word line 110 may be the word line 110 associated with thedeck that includes a target memory cell 105, as discussed below.Similarly, a column decoder 130 receives a column address from thememory controller 140 and activates the appropriate digit line 115. Forexample, memory device 100 may include multiple word lines 110, labeledWL_1 through WL_M for the illustrative array 102, and multiple digitlines 115, labeled DL_1 through DL N, where M and N depend on the arraysize. Thus, by activating a word line 110 and a digit line 115, e.g.,WL_2 and DL_2, the memory cell 105 at their intersection may beaccessed.

Upon accessing, a memory cell 105, may be read, or sensed, by sensecomponent 125 to determine the stored logic state of the memory cell105. For example, after accessing the memory cell 105, the memorycomponent of memory cell 105 may discharge onto its corresponding digitline 115. The discharging may cause a change in the voltage of the digitline 115, which sense component 125 may compare to a reference voltage(not shown) in order to determine the stored state of the memory cell105. For example, if digit line 115 has a higher voltage than thereference voltage, then sense component 125 may determine that thestored state in memory cell 105 was a logic 1 and vice versa.

Sense component 125 may include various transistors or amplifiers inorder to detect and amplify a difference in the signals, which may bereferred to as latching. The detected logic state of memory cell 105 maythen be output through column decoder 130 as input/output 135. Sensecomponent 125 may operate at a lower voltage than other components ofmemory device 100. For example, sense component 125 may be or include alow voltage latch.

A memory cell 105 may be set, or written, by activating the relevantword line 110 and digit line 115. As discussed above, activating a wordline 110 electrically connects the corresponding row of memory cells 105to their respective digit lines 115. By controlling the relevant digitline 115 while the word line 110 is activated, a memory cell 105 may bewritten—i.e., a logic value may be stored in the memory cell 105. Columndecoder 130 may accept data, for example input/output 135, to be writtento the memory cells 105. A ferroelectric memory cell 105 may be writtenby applying a voltage across the ferroelectric capacitor. This processis discussed in more detail below.

The memory controller 140 may control the operation (e.g., read, write,re-write, refresh, etc.) of memory cells 105 through the variouscomponents, such as row decoder 120, column decoder 130, and sensecomponent 125. Memory controller 140 may generate row and column addresssignals in order to activate the desired word line 110 and digit line115. Memory controller 140 may also generate and control various voltagepotentials used during the operation of memory device 100. In general,the amplitude, shape, or duration of an applied voltage discussed hereinmay be adjusted or varied and may be different for the variousoperations for operating the memory device 100. Furthermore, one,multiple, or all memory cells 105 within memory device 100 may beaccessed simultaneously; for example, multiple or all cells of memorydevice 100 may be accessed simultaneously during a reset operation inwhich all memory cells 105, or a group of memory cells 105, are set to asingle logic state. It should be appreciated that the exact operation ofthe memory device may be altered based on the type of memory deviceand/or the specific access lines used in the memory device.

FIG. 2 illustrates an example memory device 200 that supports efficientutilization of die area for cross-point architecture. In theillustrative example of FIG. 2, the memory device 200 includes athree-dimensional memory array 205. Memory device 200 may also bereferred to as an electronic memory apparatus. The memory device 200 maybe an example of the memory device 100 described with reference toFIG. 1. As such, descriptions of components with similar naming andnumbering may not be fully described with reference to FIG. 2. FIG. 1 isan illustrative schematic representation of various components andfeatures of the memory device 100. As such, it should be appreciatedthat the components and feature of the memory device 100 are shown toillustrate functional interrelationships, not their actual physicalpositions within the memory device 100. Also, FIG. 2 shows analternative schematic option of arranging sense component 126-a (in adashed box). An ordinary person skilled in the art would appreciate thatsense component may be associated either with column decoder or rowdecoder without losing its functional purposes.

Memory device 200 may include a three-dimensional (3D) memory array 205,where two or more two-dimensional (2D) memory arrays (e.g., memory array102) are formed on top of one another. In such a configuration, a 2Dmemory array may be referred to as a deck of memory cells. This mayincrease the number of memory cells that may formed on a single die orsubstrate as compared with 2D arrays, which in turn may reduceproduction costs or increase the performance of the memory device 200,or both. According to the example depicted in FIG. 2, memory device 200includes two levels (or decks) of memory cells 105-a and may thus beconsidered a three-dimensional memory array; however, the number oflevels is not limited to two. Each level may be aligned or positioned sothat memory cells 105-a may be approximately aligned with one anotheracross each level, forming a memory cell stack 210. In other embodiments(not shown), the memory device 200 may be a single level memory, e.g., atwo-dimensional memory array.

As shown in FIG. 2, the two memory cells 105-a in a memory cell stack210 may share a common conductive line such as a digit line 115-a. Thatis, a digit line 115-a may be in electronic communication with thebottom electrode of the upper memory cell 105-a and the top electrode ofthe lower memory cell 105-a. The upper memory cells 105-a may bereferred to as a top deck and the lower memory cells 105-a may bereferred to as a bottom deck. Other configurations may be possible; forexample, a third deck may share a word line 110-a with a lower deck. Ingeneral, one memory cell 105-a may be located at the intersection of twoconductive lines, such as a word line 110-a and a digit line 115-a. Thisintersection may be referred to as a memory cell's address. A targetmemory cell 105-a may be a memory cell 105-a located at the intersectionof an energized word line 110-a and digit line 115-a; that is, a wordline 110-a and digit line 115-a may be energized in order to read orwrite a memory cell 105-a at their intersection. Other memory cells 105that are in electronic communication with (e.g., connected to) the sameword line 110-a or digit line 115-a may be referred to as untargetedmemory cells. Also, depending on the memory cell (e.g., FeRAM, RRAM,etc.), other access lines, e.g., plate lines (not shown) may be involvedin accessing the storage element of a cell.

Accessing memory cells 105-a may be controlled through a row decoder120-a and a column decoder 130-a. For example, memory device 200 mayinclude multiple word lines 110-a, labeled WL_T1 through WL_TM for thetop deck of the illustrative array 205 and WL_B1 through WL_BM for thebottom deck of the illustrative array 205, and multiple digit lines115-a, labeled DL_1 through DL N, where M and N depend on the arraysize. Thus, by activating a word line 110-a and a digit line 115-a,e.g., WL_T2 and DL_2, the memory cell 105-a of the top deck at theirintersection may be accessed. By activating, for example, WL_B2 andDL_2, the memory cell 105-a of the bottom deck at their intersection maybe accessed. In some examples, other access lines or polarization lines(not shown) may be present. As such, the operations of the memory devicemay be modified based on the type of memory device and/or the specificaccess/polarization lines used in the memory device.

FIG. 3 illustrates an example of memory array 300 that supportsefficient utilization of die area for cross-point architecture. Memoryarray 300 may be an example of memory arrays 102 and 205 described withreference to FIGS. 1 and 2. As depicted in FIG. 3, memory array 300includes multiple materials to construct memory cells 105-b. Each memorycell 105-b is stacked in a vertical direction (e.g., perpendicular to asubstrate) to create memory cell stacks. Memory cells 105-b may beexamples of a memory cell 105 as described with reference to FIG. 1.Memory array 300 may thus be referred to as a three-dimensional or 3Dmemory array.

Memory array 300 also includes word lines 110-b and bit lines 115-b,which may be examples of word line 110 and bit line 115, as describedwith reference to FIG. 1. Illustration of the materials 105-b betweenthe word lines 110-b and the bit lines 115-b may represent memory cell105-a on the lower deck in FIG. 2. Memory array 300 includes electrode305 elements, logic storage component 310, substrate 315, and selectioncomponent 320. In some examples, a single component may act as both alogic storage component and a selection component. Electrode 305-a maybe in electronic communication with bit line 115-b and electrode 305-cmay be in electronic communication with word line 110-b. Insulatingmaterials depicted as empty spaces may be both electrically andthermally insulating. As described above, in PCM technology, variouslogic states may be stored by programming the electrical resistance ofthe logic storage component 310 in memory cells 105-b. In some cases,this includes passing a current through memory cell 105-b, heating thelogic storage component 310 in memory cell 105-b, or melting thematerial of the logic storage component 310 in memory cells 105-b whollyor partially. Other storage mechanism, such as threshold voltagemodulation, may be exploited in chalcogenide-based memories. The memoryarray 300 may be included as part of a quilt architecture such that thememory cells are positioned above a substrate layer that includes thesupport components.

Memory array 300 may include an array of memory cell stacks, and eachmemory cell stack may include multiple memory cells 105-b. Memory array300 may be made by forming a stack of conductive materials, such as wordlines 110-b, where each conductive material is separated from anadjacent conductive material by electrically insulating materials inbetween. The electrically insulating materials may include oxide ornitride materials, such as silicon oxide, silicon nitride, or otherelectrically insulating materials. These materials may be formed above asubstrate 315, such as a silicon wafer, or any other semiconductor oroxide substrate. Subsequently, various process steps may be utilized toform materials in between the word lines 110-b and bit lines 115-b suchthat each memory cell 105-b may be coupled to a word line and a bitline.

The selection component 320 may be connected with the logic storagecomponent 310 through electrode 305-b. In some examples, the positioningof the selection component 320 and the logic storage component 310 maybe flipped. The stack comprising the selection component 320, theelectrode 305-b, and the logic storage component 310 may be connected toa word line 110-b through the electrode 305-c and to a bit line 115-bthrough the electrode 305-a. The selection component may aid inselecting a particular memory cell 105-b or may help prevent straycurrents from flowing through non-selected memory cells 105-b adjacent aselected memory cell 105-b. The selection component may include anelectrically non-linear component (e.g., a non-ohmic component) such asa metal-insulator-metal (MIM) junction, an ovonic threshold switch(OTS), or a metal-semiconductor-metal (MSM) switch, among other types oftwo-terminal select device such as a diode. In some cases, the selectioncomponent includes a chalcogenide film. The selection component may, insome examples, include an alloy of selenium (Se), arsenic (As), andgermanium (Ge).

Various techniques may be used to form materials or components on asubstrate 315. These may include, for example, chemical vapor deposition(CVD), metal-organic vapor deposition (MOCVD), physical vapor deposition(PVD), sputter deposition, atomic layer deposition (ALD), or molecularbeam epitaxy (MBE), among other thin film growth techniques. Materialmay be removed using a number of techniques, which may include, forexample, chemical etching (also referred to as “wet etching”), plasmaetching (also referred to as “dry etching”), or chemical-mechanicalplanarization.

As discussed above, memory cells 105-b of FIG. 3 may include a materialwith a variable resistance. Variable resistance materials may refer tovarious material systems, including, for example, metal oxides,chalcogenides, and the like. Chalcogenide materials are materials oralloys that include at least one of the elements sulfur (S), tellurium(Te), or Se. Many chalcogenide alloys may be possible—for example, agermanium-antimony (Sb)-tellurium alloy (Ge—Sb—Te) is a chalcogenidematerial. Other chalcogenide alloys not expressly recited here may alsobe employed.

Phase change memory exploits the large resistance contrast betweencrystalline and amorphous states in phase change materials, which may bechalcogenide materials. A material in a crystalline state may have atomsarranged in a periodic structure, which may result in a relatively lowelectrical resistance. By contrast, material in an amorphous state withno or relatively little periodic atomic structure may have a relativelyhigh electrical resistance. The difference in resistance values betweenamorphous and crystalline states of a material may be significant; forexample, a material in an amorphous state may have a resistance one ormore orders of magnitude greater than the resistance of the material inits crystalline state. In some cases, the material may be partiallyamorphous and partially crystalline, and the resistance may be of somevalue between the resistances of the material in a wholly crystalline orwholly amorphous state. So a material may be used for other than binarylogic applications—i.e., the number of possible states stored in amaterial may be more than two.

To set a low-resistance state, a memory cell 105-b may be heated bypassing a current through the memory cell. Heating caused by electricalcurrent flowing through a material that has a finite resistance may bereferred to as Joule or Ohmic heating. Joule heating may thus be relatedto the electrical resistance of the electrodes or the phase changematerial. Heating the phase change material to an elevated temperature(but below its melting temperature) may result in the phase changematerial crystallizing and forming the low-resistance state. In somecases, a memory cell 105-b may be heated by means other than Jouleheating, for example, by using a laser. To set a high-resistance state,the phase change material may be heated above its melting temperature,for example, by Joule heating. The amorphous structure of the moltenmaterial may be quenched, or locked in, by abruptly removing the appliedcurrent to quickly cool the phase change material.

The various components, including memory cells 105-b, access lines(e.g., word lines 110-b and bit lines 115-b) may be configured oversubstrate 315 to efficiently use the area of a die the includes thecomponents. As described below, each portion of the array may overliedecoders and/or other circuitry.

FIG. 4 illustrates an example of a memory device 400 that supportsefficient utilization of die area for cross-point architecture. Asdiscussed above, the term quilt architecture may refer to a memorydevice formed of a plurality of memory tiles or memory modules having acommon configuration of components. The memory tiles may be arranged ina repeating pattern. The memory device 400 may be an example of thememory device 100 described with reference to FIG. 1.

The memory device 400 may include a memory portion 410 and a controlcircuit portion 415. The memory portion 410 of the memory device 400 mayinclude an array of memory cells and supporting circuitry for the arrayof memory cells, for example, decoders and sense amplifiers. In someinstances, the memory portion 410 may refer to an area of the memorydevice 400 that includes decoders. The control circuit portion 415 mayinclude other components related to the memory device 400. For example,the memory portion 410 may include a memory controller 140 or aninput/output 135 system. In some instances, the control circuit portion415 may refer to an area of the memory device 400 that does not includesome types of decoders or is exclusive of decoders. For example, thecontrol circuit portion 415 may be exclusive of row decoders, columndecoders, sense amplifiers, or combinations thereof. In some examples,the control circuit portion 415 may include other types of decoders, forexample, plate line decoders.

The memory portion 410 may include a core portion 420 and a boundaryportion 425. The memory portion 410 may include a substrate layer andmemory cells positioned above the substrate layer. The core portion 420may refer to an array of the memory device 400 formed using a pluralityof memory tiles 430. In some examples, the core portion 420 maycorrespond to an area of the memory device 400 that includes an array ofmemory cells (e.g., array of memory cells 510).

The memory tiles 430 may be memory modules having common components.Each memory tile 430 in the core portion 420 may have an identicalconfiguration of components. In this manner, the memory tiles 430 may beused as building blocks to assembly the memory device 400. The size of acore portion 420 (and by extension the memory portion 410 and the memorydevice 400 as a whole) may be flexible using memory tiles 430. A coreportion 420 may be enlarged during design or manufacturing by addingadditional memory tiles 430. A size of the core portion 420 may bereduced during design or manufacturing by removing memory tiles 430.

The memory tiles 430 may be configured to couple to neighboring memorytiles to form the core portion 420. In some examples, circuitry (e.g.,decoders and amplifiers) positioned in neighboring memory tiles 430 maybe configured to access memory cells positioned above the memory tile430. For example, circuitry in memory tile 430-2 may be used to accessmemory cells positioned above memory tile 430-1. In this manner, amemory tile 430 may not be configured to be fully operational as astand-alone unit. Rather, a memory tile 430 may rely on the circuitry ofneighboring tiles to provide full functionality to the memory tile 430.For example, circuitry in neighboring tiles may be used to access memorycells positioned above the memory tile.

At the borders of the core portion 420, a memory tile 430 may not have aneighboring tile to provide additional circuitry for access memorycells. To ensure functionality of all memory cells associated with amemory tile 430 on the edge of the core portion 420, a boundary portion425 may be disposed around the core portion 420. The boundary portion425 may include a plurality of first boundary tiles 435 and a pluralityof second boundary tiles 440. The first boundary tiles 435 may bepositioned at core portion 420 edges crossed by row access lines or wordlines. The second boundary tiles 440 may be positioned at core portion420 edges crossed by column access lines or digit lines.

The various tiles in the memory device 400 may have certain relativedimensions. A memory tile 430 may have a first dimension 445 extendingin a first direction and a second dimension 450 extending in a seconddirection orthogonal to the first direction. In some examples, the firstdimension 445 may be equal to the second dimension 450. In someexamples, the first dimension 445 may be different from the seconddimension 450. In some examples, the first dimension 445 may be equal toeight units and the second dimension 450 may be equal to eight units. Aunit may be associated with the size of the decoders in the memory tile.

The first boundary tile 435 may have a first dimension 455 extending inthe first direction and a second dimension 460 extending in the seconddirection. The second dimension 460 may be equal to the second dimension450. The first dimension 455 may be different than the first dimension445. In some examples, the first dimension 455 of the first boundarytile 435 is three-eighths the size of the first dimension 445 of thememory tile 430. In other examples, the first dimension 455 may be anyrelative size compared to the first dimension 445. The dimensions 455,460 of the first boundary tile 435 may be determined based at least inpart on the circuitry (e.g., decoders and amplifiers) used to accessmemory cells positioned above neighboring memory tiles 430. In someexamples, the first dimension 455 may be equal to the second dimension460. In some examples, the first dimension 455 may be different from thesecond dimension 460.

The second boundary tile 440 may have a first dimension 465 extending inthe first direction and a second dimension 470 extending in the seconddirection. The first dimension 465 may be equal to the first dimension445. The second dimension 470 may be different than the second dimension450 and the second dimension 460. In some examples, the second dimension470 of the second boundary tile 440 is one-eighths the size of thesecond dimension 450 of the memory tile 430. In other examples, thesecond dimension 470 may be any relative size compared to the seconddimension 450. The dimensions 465, 470 of the second boundary tile 440may be determined based at least in part on the circuitry (e.g.,decoders and amplifiers) used to access memory cells positioned aboveneighboring memory tiles 430. For example, the second boundary tile 440may include column decoders coupled to column lines to assist inaccessing memory cells positioned above neighboring memory tiles 430. Insome examples, the first dimension 465 may be equal to the seconddimension 470. In some examples, the first dimension 465 may bedifferent from the second dimension 470.

FIG. 5 illustrates an example of a cross-section view 500 of the memorydevice 400 of FIG. 4 along the line 5-5. The cross-section view 500shows the various layers and decks that may be included in the memorydevice 400. The memory device 400 may include a substrate layer 505 anddecks 515 of memory cells positioned above the substrate layer 505. Insome examples, the substrate layer 505 may be referred to as aperipheral region.

The substrate layer 505 may include the portion of the memory device 400that includes support circuitry such as decoders and amplifiers. Thesubstrate layer 505 may include portions of the control circuit portion415, portions of the core portion 420 (e.g., the support circuitry butnot the memory cells), and portion of the boundary portion 425. In someexamples, the substrate layer 505 is positioned below the array ofmemory cells 510. The substrate layer of the memory portion 410 may bereferred to as complementary metal-oxide-semiconductor (CMOS) underarray (CuA). The core portion 420 and the boundary portion 425 may bereferred to as CuA.

The array of memory cells 510 may be an example of the memory cells 105described with reference to FIG. 1. The array of memory cells 510 mayinclude a plurality of decks 515 of memory cells. The decks 515 ofmemory cells may each be a two-dimensional array of memory cells. Thedecks 515 of memory cells may be an example of the decks of memory cellsdescribed with reference to FIG. 1. The array of memory cells 510 may bepositioned over the core portion 420 of the substrate layer 505. In theillustrative example, the array of memory cells is not positioned overthe boundary portion 425 or the control circuit portion 415 of thesubstrate layer 505 such that the decks 515 do not overlap the portions415, 425. The memory device 400 may include any number of decks 515 ofmemory cells. In some examples all of the memory cells positioned abovethe core portion 420 are accessible using support components positionedin the core portion 420 and the boundary portion 425.

FIG. 6 illustrates an example of memory tile configurations 600 thatsupports efficient utilization of die area for cross-point architecture.FIG. 6 illustrates only a portion of a tile under a memory array forclarity purposes. The memory tile configurations 600 may include a firstconfiguration 605 and a second configuration 610. The firstconfiguration 605 and the second configuration 610 may be examples ofmemory tiles 430 described with reference to FIGS. 4 and 5. A coreportion 420 of a memory device 400 may be formed as a repeating patternof one of the configurations 605, 610.

The first configuration 605 and the second configuration 610 includesimilar components but different arrangements of components. Eachconfiguration 605, 610 includes column line decoders 615, row linedecoders 620 for a first deck 515-1 of memory cells, row line decoders625 for a second deck 515-2 of memory cells, sense amplifiers 630 forthe first deck 515-1, and sense amplifiers 635 for the second deck515-2. In some examples, the configuration 605, 610 may includecomponents for any number of memory decks of memory cells. In the memorytiles 430 may include additional circuitry and components not expresslydescribed with regards to the configurations 605, 610.

The column line decoder 615 may be coupled to column line (see columnlines 1405 in FIG. 14). The column line decoder 615 may be configured toaccess memory cells in multiple decks 515. A single column line may beconfigured to access multiple decks 515 of memory cells. The column linedecoder 615 may be positioned in a variety of locations in the memorytile 430. The column line decoder 615 may be a number of shapes andsizes. The locations and sizes shown in configurations 605, 610 are forillustrative purposes only and are not limiting. The column line decoder615 may be an example of the row decoder 130 described with reference toFIG. 1.

The row line decoder 620 may be coupled to a row line (see row lines 705in FIG. 7). The row line decoder 620 may be configured to access memorycells in a single deck 515 (e.g., access memory cells in deck 515-1). Asingle row line may be associated with a single deck 515 of memorycells. The row line decoder 620 may be positioned in a variety oflocations in the memory tile 430. The row line decoder 620 may be anumber of shapes and sizes. The locations and sizes shown inconfigurations 605, 610 are for illustrative purposes only and are notlimiting. The row line decoder 620 may be an example of the columndecoder 120 described with reference to FIG. 1.

The row line decoder 625 may be coupled to a row line (see row lines 710in FIG. 7). The row line decoder 625 may be configured to access memorycells in a single deck 515 (e.g., access memory cells in deck 515-2). Asingle row line may be associated with a single deck 515 of memorycells. The row line decoder 625 may be positioned in a variety oflocations in the memory tile 430. The row line decoder 625 may be anumber of shapes and sizes. The locations and sizes shown inconfigurations 605, 610 are for illustrative purposes only and are notlimiting. The row line decoder 625 may an example of the column decoder120 described with reference to FIG. 1. The row line decoder 625 may bean example of the row line decoder 620 described above.

The sense amplifier 630 may be coupled to a row line (see row lines 705of FIG. 7). The sense amplifier 630 may be configured to amplify asignal on a row line during an access operation. The sense amplifier 630may be associated with a single deck 515 of memory cells (e.g., deck515-1). The sense amplifier 630 may be positioned in a variety oflocations in the memory tile 430. The sense amplifier 630 may be anumber of shapes and sizes. The locations and sizes shown inconfigurations 605, 610 are for illustrative purposes only and are notlimiting. The sense amplifier 630 may be an example of at least acomponent of the sense component 125 described with reference to FIG. 1.

The sense amplifier 635 may be coupled to a row line (see row lines 710of FIG. 7). The sense amplifier 635 may be configured to amplify asignal on a row line during an access operation. The sense amplifier 635may be associated with a single deck 515 of memory cells (e.g., deck515-2). The sense amplifier 635 may be positioned in a variety oflocations in the memory tile 430. The sense amplifier 635 may be anumber of shapes and sizes. The locations and sizes shown inconfigurations 605, 610 are for illustrative purposes only and are notlimiting. The sense amplifier 635 may be an example of at least acomponent of the sense component 125 described with reference to FIG. 1.The sense amplifier 635 may be an example of the sense amplifier 630described above. In some examples, sense amplifiers 630 and 635 may becoupled to column lines rather than to row lines. In some examples,sense amplifiers 630, 635 may be coupled to bit lines. In some examples,the sense amplifiers 630, 635 may be coupled to word lines.

The configuration 605 of a memory tile 430 may be arranged such that ifmemory tiles 430 having the configuration 605 are placed in a repeatingpattern an array of memory cells and support circuitry may be formed.The support circuitry (e.g., decoders and amplifiers) may be arrangedsuch that when memory tiles 430 are positioned next to each other acontinuous pattern of components are formed. For example, if a memorytile 430-2 having the configuration 605 is placed next to a memory tile430-1 having a configuration 605 a repeating pattern of decoders 620,decoders 615, decoders 625, decoders 615, etc. may be formed in a firstdirection. A similar pattern of decoders may be formed by configuration605 in a second direction orthogonal to the first direction.

The configuration 610 of a memory tile 430 may be arranged such that ifmemory tiles 430 having the configuration 610 are placed in a repeatingpattern an array of memory cells and support circuitry may be formed.Similar to configuration 605, if a memory tile 430-2 having theconfiguration 610 is placed next to a memory tile 430-1 having aconfiguration 610 a repeating pattern of decoders 620, decoders 615,decoders 625, decoders 615, etc. may be formed in a first direction.However, a different pattern of decoders may be formed by theconfiguration 610 in a second direction orthogonal to the firstdirection.

In some instances, the core portion 420 may include a multipleconfigurations 600 of memory tiles 430. A set of distinct configurationsmay be configured to cooperate with one another. For example, a coreportion 420 may include two distinct configurations of memory tiles 430arranged in an alternating pattern. In other examples, patterns that usethree or more configurations may be formed using memory tiles 430.

FIG. 7 illustrates an example of a memory tile 700 having access linesthat support efficient utilization of die area for cross-pointarchitecture. FIG. 7 depicts both a top-down view 702 and across-section view 704 of the memory tile 700. The top-down view 702illustrates only components in the substrate layer and row lines forclarity. For example, portions of the memory tile may be omitted forclarity. The row lines are shown offset in a two-dimensional arrangementin 702 for clarity purposes only. The cross-section view illustratesonly components in the substrate layer and row lines for clarity inaddition to a few two-deck memory cells and bit lines associated withthem. In another example, row lines associated with different decks maybe positioned at different heights in the memory device as depicted inthe cross-section view 704. As such, in some examples, row lines mayoverlap or may stacked on top of another as depicted in thecross-section view 704. In some examples, the memory tile 700 may be anexample of the memory tile 430 described with reference to FIGS. 4-6.The memory tile 700 may be arranged in a manner similar to theconfiguration 605 described with reference to FIG. 6. The memory tile700 may include a row line 705 and a row line 710 overlaid the circuitry(e.g., decoders and amplifiers). The row lines 705, 710 may be anexample of digit lines 115 described with reference to FIGS. 1 and 2. Insome instances, row lines 705, 710 may be an example of word lines 110described with reference to FIG. 1. References to word lines and bitlines, or their analogues are interchangeable without loss ofunderstanding or operation.

The row lines 705, 710 may be coupled to memory cells 510 in the memoryarray. A particular row line may be dedicated to a particular deck 515of memory cells. For example, row line 705 may be associated with afirst deck 515-1 and row line 710 may be associated with a second deck515-2. The row lines 705, 710 may each have a common length. In someexamples, row lines associated with a higher deck of memory cells may belonger than the common length. For example, a row line 710-1 may extenda fixed distance between two unassociated row decoders. Row line 710-1is associated with the second deck 515-2 of memory cells. Row line 710-1may also be associated with row line decoders 625-1 and 625-2 such thatmemory cells of the second deck 515-2 are operatively coupled to thedecoders 625-1, 625-2 via the row line 710-1. Row line 710-1 extendsfrom a row line decoder 620-1 adjacent to the row line decoder 625-1 ina first direction to a row line decoder 620-2 adjacent to the row linedecoder 625-2 in the first direction. It should be appreciated that therow line decoders 620-1, 620-2 are associated with a different deck ofmemory cells than the row line 710-1. Row line decoder 625-1 or row linedecoder 625-2 or both are associated with the row line 710-1. In someinstances, the row line 710-1 terminates at or near a division betweentwo adjacent row decoders associated with a different deck (e.g., rowdecoders 620-1 and 620-2). This may occur because circuitry associatedwith the row decoders may prevent the row line 710-1 from extendingfurther.

In some instances, row line 705-1 or row line 705-2 may also terminateat a or near a division between two adjacent row decoders associatedwith a different deck (e.g., row decoders 625-1 and 625-2). For example,area 720 between row line decoders 625-1 and 625-2 may prevent row lines705-1 and 705-2 from extending further. In some examples, the row linesand column lines associated with an upper deck of memory cells may belonger than the row lines and column lines associated with a lower deckof memory cells. In some examples, the area 720 between row linedecoders may be used for connections of row lines of higher decks. Insome examples, the area 720 may be impassable to some row lines (e.g.,row lines 705) because a wall of vias coupled to row lines of otherdecks (e.g., row lines 710) are occupying this space. So in someexamples, an access line or a subset of access lines positioned in theboundary portion may each terminate at the control circuit portion ormay span to a maximum length otherwise used or designated for the array.

Row lines 705, 710 may span boundaries between memory tiles 700. Forexample, end 715 may show that row line 705-3 extends beyond thespecific memory tile 700 represented in FIG. 7. In some examples, therow lines 705, 710 may be formed by overlaying the row lines over thesubstrate layer 505. In some examples, there may be additional types ofrow lines based at least in part on the number of distinct decks 515 ofmemory cells that are part of the memory device 400. The row lines 705,710 may be positioned in a variety of locations in the memory tile 700.The row lines 705, 710 may be any number of shapes and sizes. Thelocations and sizes shown in FIG. 7 are for illustrative purposes onlyand are not limiting. In some instances, a subset of row lines may havea length that is less than the common length. For example, some rowlines may be terminated early because the row lines reach an edge of thememory portion 410 of the memory device 400. In some examples, row lines705, 710 may be positioned over boundary tiles 435.

The cross-section view 704 illustrates that row lines 705 may bepositioned at a different distance from the substrate layer 505 than rowlines 710. In some examples, row lines 710 are positioned over row lines705. In some examples, the row lines 710 are positioned directly overtop of row lines 705. In some examples, the row lines 710 may be offsetfrom the row lines 705. Contacts 740, 745 may extend from the substratelayer 505 to their respective decks of memory cells. For example,contact 740 may couple row line decoders for the second deck (e.g., rowline decoders 625) to a row line for the second deck (e.g., row line710). In other examples, contact 745 may couple row line decoder for thefirst deck (e.g., row line decoders 620) to a row line for the firstdeck (e.g., row line 705). In some examples, the contacts 740, 745 maybe vias. In some cases, the contacts 740 may configured as stackedcontacts. In some examples, a plurality of the contacts 740 may form awall that does not permit the row lines 705 to extend through. In someexamples, the contacts 740, 745 may not be considered part of theirrespective decoders. Regardless of the designation of the contacts 740,745, it should be appreciated that memory cells may be positioned overor above the decoders 620, 625 and other support circuit component 750(e.g., column decoders or sense amplifiers).

In some examples, plate lines (now shown) or other access lines may beintegrated into the memory tiles 700. For example, a plate line may beconfigured to bias a memory cell during an access operation. Otherdecoders may be incorporated into the memory device to utilize the otheraccess lines or plate lines. Plate lines or other access lines may be inelectronic communication with a memory controller of the memory device.In some examples, plate lines may be coupled to a plate associated witha capacitor of a memory cell in the memory device.

FIG. 8 illustrates an example of boundary tile configurations 800 thatsupports efficient utilization of die area for cross-point architecture.FIG. 8 illustrates only components in the substrate layer for clarity.The boundary tile configurations 800 may include a first configuration805 and a second configuration 810. The first configuration 805 may beconfigured and arranged to be positioned on a first side of the coreportion 420 (e.g., the left side of the core portion 420 shown in FIG.4). For example, the boundary tiles 435-1 and 435-3 may be arrangedusing the first configuration 805. The second configuration 810 may beconfigured and arranged to be positioned on a second side of the coreportion 420 opposite the first side (e.g., the right side of the coreportion 420 shown in FIG. 4). For example, the boundary tiles 435-2 and435-4 may be arranged using the second configuration 810. The firstconfiguration 805 and the second configuration 810 may be examples ofboundary tiles 435 described with reference to FIGS. 4 and 5. A boundaryportion 425 of a memory device 400 may be formed as a repeating patternof the configuration 805, 810.

The configurations 805, 810 may correspond to a core portion 420 formedof memory tiles 430 arranged using configuration 605. In other examples,components of the configurations 805, 810 may be rearranged tocorrespond to configuration 610 or any other configurations of memorytiles 430.

The configurations 805, 810 include row line decoders 620, row linedecoders 625, sense amplifiers 630, and sense amplifiers 635. In theillustrative example, configurations 805, 810 do not include column linedecoders 615. Because memory cells are not positioned above the boundarytiles 435, column lines are also not positioned above the boundary tiles435, and, therefore, column line decoders may not be included in theconfigurations 805, 810 of boundary tiles 435.

The boundary tile configurations 800 may include a number of decodersthat is less than a number of decoders in a memory tile 430 of the coreportion 420. For example, because memory cells are not positioned abovethe substrate layer of a boundary tiles 435, the boundary tileconfigurations 800 do not include column decoders. In other examples,the boundary tile configurations 800 include fewer row decoders 620, 625and fewer sense amplifiers 630, 635 than are present in a memory tile430 of the core portion 420. In some examples, the number of decoders ina single boundary tile configuration 800 (e.g., first configuration 805or second configuration 810) may be less than half of the number ofdecoders in a memory tile 430 of the core portion 420.

FIG. 9 illustrates an example of a memory device 900 that supportsefficient utilization of die area for cross-point architecture. Thememory device 900 may include a memory portion 905 and a control circuitportion 415. The memory portion 905 may include a core portion 420 and aboundary portion 910. The memory portion 905 of the memory device 900includes a boundary portion 910 positioned on only one side of the coreportion 420. In this manner, the area of the memory portion 905 may beless than the area of the memory portion 410 of the memory device 400.The memory device 900 may be an example of the memory devices 100 or 400described with reference to FIGS. 1 and 4-8. The memory portion 905 maybe an example of the memory portion 410 described with reference toFIGS. 4-8. The boundary portion 910 may be an example of the boundaryportion 425 described with reference to FIGS. 4-8.

The area of the memory portion 905 may be less than the area of memoryportion 410 of the memory device 400. The boundary portion 910 may havedifferent dimensions from the boundary portion 425 of the memory device400. The area of the boundary portion 910 may be less than the combinedtotal area of the boundary portions 425 of the memory device 400. Insome examples, the right boundary portion of the memory device 900 mayhave an area larger than the right boundary portion of the memory device400. However, the total area of the boundary portion 910 may be lessthan the total area of the boundary portion 425, which may include atleast a left boundary portion and a right boundary portion.

Difference in the areas of the core portion 420 and the boundary portion910 may be appreciated based on the dimensions of the respectiveportions. The core portion 420 may include a number of memory tiles 430.The memory tiles 430 may define a first dimension 445 and a seconddimension 450.

The boundary portion 910 may include a number of boundary tiles 915.Boundary tiles 915 may be an example of the boundary tiles 435 describedwith reference to FIGS. 4, 5, and 8. A boundary tile 915 may include afirst dimension 920 extending a first direction and a second dimension460 extending in a second direction orthogonal to the first direction.The first dimension 920 may be different than the first dimension 445.In some examples, the first dimension 920 of the first boundary tile915-1 is one-half the size of the first dimension 445 of the memory tile430. In other examples, the first dimension 920 may be any relative sizecompared to the first dimension 445. The dimensions 920, 460 of thefirst boundary tile 915-1 may be determined based at least in part onthe circuitry (e.g., decoders and amplifiers) used to access memorycells positioned above neighboring memory tiles 430 and above theboundary tile 915. In some examples, the first dimension 920 may beequal to the second dimension 460. In some examples, the first dimension920 may be different from the second dimension 460.

In some examples, the first dimension 920 may be larger than the firstdimension 455 of the boundary tile 435 because the boundary tile 915includes additional components to access memory cells positioned abovethe boundary tile 915. In some instances, the first dimension 920 may belarger because of additional column line decoders 615 in the boundarytile 915.

The memory portion 905 may define a number of borders. For example, thecore portion 420 may include borders 930, 935, 940, 945. As used herein,a border may refer to a line separating two areas of the memory device900. For example, the term border may refer to a line where a particularportion of the memory device 900 terminates. The first border 930, thesecond border 935, and the third border 940 may define an intersectionof the core portion 420 with the control circuit portion 415. In someexamples, the borders 930, 935, 940 may be defined as the line where anarray of memory cells terminates or an array of support circuitryterminates. The fourth border 945 may define an intersection of the coreportion 420 with the boundary portion 910. The fourth border 945 may bepositioned opposite the first border 930.

The boundary portion 910 may include borders 950, 955, 960, 965. Thefirst border 950, the second border 955, and the third border 960 maydefine an intersection of the boundary portion 910 with the controlcircuit portion 415. In some examples, the borders 950, 955, 960 may bedefined as the line where an array of memory cells terminates or anarray of support circuitry terminates. The fourth border 965 maycooperate with the fourth border 945 to define an intersection of thecore portion 420 and the boundary portion 910. The fourth border 965 maybe positioned opposite the first border 950. In some examples,boundaries may be defined between memory tiles 430 and/or boundary tiles910.

In some examples, the borders 930, 935, 940, 945, 950, 955, 960, 965 maybe aligned with an edge of a decoder. In some examples, the borders 930,935, 940, 945, 950, 955, 960, 965 may extend beyond the edge of adecoder. The intersection of the of the core portion 420 and theboundary portion 910 or the outer boundaries (e.g., as represented byborder 930, 935, 940, 950) may be less precise in practice than what isdepicted in FIG. 9. In some examples, the outer boundaries may bealigned with edges of the array of memory cells.

FIG. 10 illustrates an example of a cross-section view 1000 of thememory device 900 of FIG. 9 along the line 10-10. The cross-section view1000 shows the various layers and decks that may be included in thememory device 900. The memory device 900 may include a substrate layer505 and decks 515 of memory cells positioned above the substrate layer505. The cross-section view 1000 may be an example of the cross-sectionview 500 described with reference to FIG. 5.

In the memory device 900, the arrays of memory cells 510 (or the decks515) are positioned over both the core portion 420 and the boundaryportion 910. In this manner, the arrays of memory cells 510 may bepositioned over the entire memory portion 905.

Such a configuration of arrays of memory cells 510 may be configured tocompensate for memory cells that are inaccessible near the border 930.Some memory cells positioned above a substrate layer of a particularmemory tile may be accessed using support circuitry in a neighboringmemory tile. For memory tiles near or at a border, boundary tiles may bepositioned such that all the memory cells above the memory tiles 430 areall fully accessible. Because the memory device 900 includes a boundaryportion 910 on only one side of the core portion 420, some memory cellspositioned over the core portion may not be accessible. In someexamples, to compensate for inaccessible memory cells above the memorytiles 430, the memory cells may be positioned above the boundary portion910. The boundary tiles 915 may include additional components associatedwith the memory cells positioned above the boundary tiles.

In some examples, the decks of memory cells 510 overlap the core portion420 and the boundary portion 910 of the substrate layer 505. Meaning anarray of memory cells may extend over or cover partly the core portion420 and the boundary portion 910 of the substrate layer 505. Forexample, regions of the core portion 420 and/or the boundary portion 910may not have memory cells positioned directly above them, but still thearray of memory cells may overlap those regions. In some examples, thearrays of memory cells overlap at least a part of the boundary portion910 of the substrate layer 505.

FIG. 11 illustrates an example of a boundary tile configuration 1100that supports efficient utilization of die area for cross-pointarchitecture. FIG. 11 illustrates only components in the substrate layerfor clarity. To facilitate access to the memory cells positioned abovethe boundary portion 910, the boundary tile configuration 1100 mayinclude column line decoders 615. The column line decodes 615 may coupleto column lines positioned above the boundary portion, where the columnlines may be coupled to the memory cells positioned above the boundaryportion 910. The boundary tile configuration 1100 may be an example ofthe boundary tiles 915 described with reference to FIGS. 9 and 10. Theboundary tile configuration 1100 may be an example of the configuration810 described with reference to FIG. 8.

The boundary tile configuration 1100 may be configured and arranged tobe positioned on a first side of the core portion 420 (e.g., the rightside of the core portion 420 shown in FIG. 9). For example, the boundarytiles 915-1 and 915-2 may be arranged using the boundary tileconfiguration 1100. In other examples, boundary tile configuration 1100may be configured and arranged to be positioned on a second side of thecore portion 420 (e.g., the left side of the core portion 420 shown inFIG. 9).

In some examples, column decoders 615 may be positioned between rowdecoders (e.g., row line decoders 620, 625) and the control circuitportion 415. For example, column decoders 615 may be positioned betweenthe first border 950 and row line decoders 620, 625. The first border950 may be positioned opposite the fourth border 965 that defines theintersection of the core portion 420 and the boundary portion 910.

The boundary tile configuration 1100 may include a number of decodersthat is less than a number of decoders in a memory tile 430 of the coreportion 420. For example, because memory cells are positioned above thesubstrate layer of a boundary tiles 435, the boundary tileconfigurations 800 may include a number of column decoders 615. In someexamples, the number of column decoders 615 is equal to half of a numberof column decoders 615 in a memory tile 430 of the core portion 420. Inother examples, the boundary tile configuration 1100 includes fewer rowdecoders 620, 625 and fewer sense amplifiers 630, 635 than are presentin a memory tile 430 of the core portion 420. In some examples, thenumber of decoders in a single boundary tile configuration 1100 may beless than half of the number of decoders in a memory tile 430 of thecore portion 420.

FIG. 12 illustrates an example of a memory portion 1200 that supportsefficient utilization of die area for cross-point architecture. FIG. 12illustrates only components in the substrate layer and row lines forclarity. For example, portions of the memory tile may be omitted forclarity. In another example, row lines associated with different decksmay be positioned at different heights in the memory device. As such, insome examples, row lines may overlap or may be stacked on top of oneanother. The row lines are shown offset in a two-dimensional arrangementfor clarity purposes only. The memory portion 1200 may be an example ofthe memory portion 905 described with reference to FIG. 9. The memoryportion 1200 shows the support components and some of the access linesof the memory tiles 430 and the boundary tiles 915. In the illustrativeexamples of the memory portion, the memory tiles 430 and the boundarytiles 915 are spaced apart to provide additional clarity about whereeach tile begins and ends. In some examples, the memory portion 1200does not include the gaps between the memory tiles 430 and the boundarytiles 915.

Some access lines may be truncated because these access lines are nearor at a border. For example, various row lines 705, 710 may be truncatedat various borders between the memory portion 1200 and the controlcircuit portion 415 of the memory device 900. Some truncated accesslines are indicated as access line 1215. Truncated access lines may havea length that is less than a common length of access lines. Other accesslines, other than the ones indicated, may also be truncated. Forexample, some access lines coupled to decoders located in border tilesmay be shorter than access lines coupled to decoders located in corememory tiles. Some access lines coupled to decoders located in the corememory tiles may have a length less than the common length. This may bebecause array of memory cells ends at an edge. Access lines coupled to afirst deck may have a different length than access liens coupled to asecond deck. Access lines (e.g., row lines) associated with differentdecks of memory cells may have different lengths. For example, row lines710 associated with a higher deck may be longer than row lines 705associated with a lower deck. In some examples, border access lines maybe coupled to a memory cell positioned above a substrate layer of a corememory tile. In some examples, border access liens may be coupled to amemory cell positioned above a substrate layer of a border tile. Bycoupling memory cells to border access lines additional storage capacityin selected column regions may be provided.

Some access lines may be removed from the memory portion 1200 or may beinactive. Because certain memory cells are accessed using supportcomponents in neighboring tiles, certain areas of memory cells near theborders may not be accessible. In situations where a decoder is notpresent to access certain memory cells, the access line associated withthat decoder may not be included in the memory portion 1200 or may beinactive. Some areas where access lines are omitted, inactive, or notincluded in the memory portion 1200 are indicated as areas 1210. Otherareas, other than the ones indicated, may be present in the memoryportion 1200.

Similarly to the description herein, in each of the memory tiles 430 therow lines may be coupled to memory cells in the memory array. Aparticular row line may be dedicated to a particular deck of memorycells. Row lines may also be associated with row line decoders for theirrespective deck. In the boundary tiles 915, row decoders for each deckmay be associated to corresponding row lines of the array that are notassociated to row decoders in the core portion memory tiles. Such aconfiguration may allow accessing an increased number of memory cell, asdetailed herein.

FIG. 13 illustrates an example of a memory portion 1300 that supportsefficient utilization of die area for cross-point architecture. Thememory portions 1300 may include a first memory portion 1305 and asecond memory portion 1310. The memory portions 1300 may be examples ofmemory portions 905 and 1200 described with reference to FIGS. 9, 10,and 12.

The memory portions 1300 illustrate which memory cells may be accessedin the memory device 900. Because some memory cells are accessed usingsupport components (e.g., row decoders) positioned in neighboring tiles,not all memory cells may be accessible near the borders. Memory portion1305 illustrates which memory cells are accessible in the first deck515-1 of memory cells associated with the memory device 900. Memoryportion 1310 illustrates which memory cells are accessible in the seconddeck 515-2 of memory cells associated with the memory device 900. Morespecifically, the memory portion 1300 correspond to the configuration ofcomponents shown in FIG. 12. The gray areas of the memory portions 1300correspond to accessible memory cells. The white areas of the memoryportions 1300 correspond to memory cells that are not accessible. Insome embodiments, the inaccessible memory cells correspond with areas1210 described with reference to FIG. 12. The memory portions 1300 arefor illustrative purposes only. Other configurations accessible memorycells are also possible. Configurations of accessible memory cells maybe based on the configurations of the components in the memory portion905 of the memory device 900.

FIG. 14 illustrates an example of a memory portion 1400 that supportsefficient utilization of die area for cross-point architecture. FIG. 14illustrates only components in the substrate layer and row lines forclarity. For example, portions of the memory tile may be omitted forclarity. In another example, row lines associated with different decksmay be positioned at different heights in the memory device. As such, insome examples, row lines may overlap or may be stacked on top of oneanother. The row lines are shown offset in a two-dimensional arrangementfor clarity purposes only. The memory portion 1400 may be an example ofmemory portions 905, 1200, 1300 described with reference to FIGS. 9, 10,12, and 13. The memory portion 1400 shows the memory portion 905 withcolumn lines 1405. The column lines 1405 may be examples of the wordlines 110 described with reference to FIG. 1. In some instances, thecolumn lines 1405 may be examples of the digit lines 115 described withreference to FIG. 1. References to word lines and bit lines, or theiranalogues are interchangeable without loss of understanding oroperation. The column lines 1405 may be coupled to multiple decks ofmemory cells. In some instances, the column lines 1405 may be positionedbetween row lines 705, 710. For example, a column line 1405 may bepositioned above row line 705 and row line 710 may be positioned above acolumn line 1405. Column lines 1405 may be coupled to or associated withcolumn line decoders in the memory tiles (either in the core portion orthe border portion) as described herein.

In some examples, an active memory cell in the array of memory cells iscoupled to both a row line (e.g., row line 705 or row line 710 dependingon the deck) and a column line 1405. The column line 1405 extendsperpendicular to the row line 705, 710, in some examples. An activememory cell may be an example of a memory cell that includes both a rowaddress and a column address or is accessible by a memory controller.

A column line 1405 may define a common length between multiple columnlines 1405. In some examples, a column line 1405 may have a length thatis different from the common length. For example, a column line 1405 maybe shorter or longer than the common length.

FIG. 15 illustrates an example of a memory portion 1500 that supportsefficient utilization of die area for cross-point architecture. Thememory portion 1500 may be an example of memory portions 905, 1200,1300, 1400 described with reference to FIGS. 9, 10, 12, 13, and 14. Thememory portion 1500 may be illustrated to show how access operations maybe used with the memory device 900. Some column lines are omitted inFIG. 15 for illustrative purposes only.

The memory portion 1500 may be broken into regions 1505. The memoryportion 1500 may include eight regions (regions zero through seven). Aregion may comprise a collection of column lines 1405. As used herein,access operations may refer to read operations (i.e., sense operations)or write operations. While eight regions 1505 are shown in FIG. 15,other numbers of regions may be configured.

During an access operation, a memory controller may activate one of theregions. For example, the memory controller may activate region three(3). A number of memory cells are coupled to the column lines in regionthree (3) via the row lines that intersect the column lines in regionthree (3). In some examples, the number of access operations in a regionis equal to the number of intersections 1510, 1515 of row lines andcolumn lines in the region.

In memory portion 1500, each region is capable of performing a certainnumber of access operations. For example, in the illustrative example ofmemory portion 1500, region zero through region three may each be ableto perform seventy-six access operations. Some cells in regions zerothrough three may not be accessible because the cells are near theborder (e.g., as shown in FIG. 13 where only decoded row lines aredepicted). In addition, some cells positioned above the boundary portionmay not be accessible, such as those positioned near the border at theboundary portion. However, other memory cells positioned above theboundary portion are available in regions zero through three. Toillustrate the number of access operations, a detailed explanation ofregion 3 is presented. It should be appreciated that such a descriptionalso corresponds to regions 0, 1, and 2. The leftmost column line inregion 3 is capable of accessing fourteen cells on the first deck viaintersecting row lines for the first deck and is capable of accessingfourteen cells on the second deck via intersecting row lines for thesecond deck. The center column line in region 3 is capable of accessingsixteen cells on the first deck via intersecting row lines for the firstdeck and is capable of accessing sixteen cells on the second deck viaintersecting row lines for the second deck. The rightmost column line inregion 3 is capable of accessing eight cells on the first deck viaintersecting row lines for the first deck and is capable of accessingeight cells on the second deck via intersecting row lines for the seconddeck. In total the column lines in region 3 (e.g., leftmost, center, andrightmost) are capable of accessing seventy-six memory cells. It shouldbe appreciated that FIG. 15 may represent only a portion of a memoryarray. As such, the principles outlined may be expanded to coveradditional and/or larger implementations.

In memory portion 1500, region four through region seven may each beable to perform sixty-four access operations. In the illustrativeexample, regions four through seven do not include accessing any memorycells positioned over the boundary portion 910. It should be appreciatedthat if the boundary portion 910 were positioned on the other side ofthe core portion 420, the numbering of the region numbers andcharacteristics may be different. For example, regions zero throughthree may be capable of performing sixty-four access operations andregions four through seven may be capable of performing seventy-sixaccess operations. The number of access operations that are able to beperformed by a region may vary depending on the size of the regionand/or the size of the memory portion 1500. For example, as the memoryportion 1500 gets larger, the number of access operation able to beperformed by a region may increase. To illustrate the number of accessoperations, a detailed explanation of region 5 is presented. It shouldbe appreciated that such a description also corresponds to regions 4, 6,and 7. The leftmost column line in region 5 is capable of accessingsixteen cells on the first deck via intersecting row lines for the firstdeck and is capable of accessing sixteen cells on the second deck viaintersecting row lines for the second deck. The rightmost column line inregion 5 is capable of accessing sixteen cells on the first deck viaintersecting row lines for the first deck and is capable of accessingsixteen cells on the second deck via intersecting row lines for thesecond deck. In total the column lines in region 5 (e.g., leftmost andrightmost) are capable of accessing sixty-four memory cells. It shouldbe appreciated that FIG. 15 may represent only a portion of a memoryarray. As such, the principles outlined may be expanded to coveradditional and/or larger implementations.

FIG. 16 shows a block diagram 1600 of a memory array 1605 that supportsefficient utilization of die area for cross-point architecture inaccordance with various embodiments of the present disclosure. Memoryarray 1605 may be referred to as an electronic memory apparatus, and maybe an example of a component of a memory controller 140 as describedwith reference to FIG. 1.

Memory array 1605 may include one or more memory cells 1610, a memorycontroller 1615, a word line 1620, a plate line 1625, a referencecomponent 1630, a sense component 1635, a digit line 1640, and a latch1645. These components may be in electronic communication with eachother and may perform one or more of the functions described herein. Insome cases, memory controller 1615 may include biasing component 1650and timing component 1655.

Memory controller 1615 may be in electronic communication with word line1620, digit line 1640, sense component 1635, and plate line 1625, whichmay be examples of word line 110, digit line 115, and sense component125 described with reference to FIGS. 1, and 2. Memory array 1605 mayalso include reference component 1630 and latch 1645. The components ofmemory array 1605 may be in electronic communication with each other andmay perform some aspects of the functions described with reference toFIGS. 1 through 15. In some cases, reference component 1630, sensecomponent 1635, and latch 1645 may be components of memory controller1615.

In some examples, digit line 1640 is in electronic communication withsense component 1635 and a capacitor of memory cells 1610. In someexamples, the capacitor may be a ferroelectric capacitor and the memorycell 1610 may be a ferroelectric memory cell. A memory cell 1610 may bewritable with a logic state (e.g., a first or second logic state). Wordline 1620 may be in electronic communication with memory controller 1615and a selection component of memory cell 1610. Plate line 1625 may be inelectronic communication with memory controller 1615 and a plate of thecapacitor of memory cell 1610. Sense component 1635 may be in electroniccommunication with memory controller 1615, digit line 1640, latch 1645,and reference line 1660. Reference component 1630 may be in electroniccommunication with memory controller 1615 and reference line 1660. Sensecontrol line 1665 may be in electronic communication with sensecomponent 1635 and memory controller 1615. These components may also bein electronic communication with other components, both inside andoutside of memory array 1605, in addition to components not listedabove, via other components, connections, or busses.

Memory controller 1615 may be configured to activate word line 1620,plate line 1625, or digit line 1640 by applying voltages to thosevarious nodes. For example, biasing component 1650 may be configured toapply a voltage to operate memory cell 1610 to read or write memory cell1610 as described above. In some cases, memory controller 1615 mayinclude a row decoder, column decoder, or both, as described withreference to FIG. 1. This may enable memory controller 1615 to accessone or more memory cells 105. Biasing component 1650 may also providevoltage potentials to reference component 1630 in order to generate areference signal for sense component 1635. Additionally, biasingcomponent 1650 may provide voltage potentials for the operation of sensecomponent 1635.

In some cases, memory controller 1615 may perform its operations usingtiming component 1655. For example, timing component 1655 may controlthe timing of the various word line selections or plate biasing,including timing for switching and voltage application to perform thememory functions, such as reading and writing, discussed herein. In somecases, timing component 1655 may control the operations of biasingcomponent 1650.

Reference component 1630 may include various components to generate areference signal for sense component 1635. Reference component 1630 mayinclude circuitry configured to produce a reference signal. In somecases, reference component 1630 may be implemented using other memorycells 105. Sense component 1635 may compare a signal from memory cell1610 (through digit line 1640) with a reference signal from referencecomponent 1630. Upon determining the logic state, the sense componentmay then store the output in latch 1645, where it may be used inaccordance with the operations of an electronic device that memory array1605 is a part. Sense component 1635 may include a sense amplifier inelectronic communication with the latch and the memory cell.

Memory controller 1615 may identify at least one cell of an array ofmemory cells that overlaps a boundary portion of a substrate layer,where the array is coupled to decoders of a core portion and theboundary portion via access lines, and where the substrate layerincludes a control circuit portion exclusive of decoders and access theat least one cell using a decoder of the boundary portion. In someexamples, the control circuit portion may be exclusive of row decoders,column decoders, sense amplifiers, or combinations thereof. In someexamples, memory cells 1610 may comprise PCM orchalcogenide-material-based memory cells.

FIG. 17 shows a block diagram 1700 of an access operation manager 1715that supports efficient utilization of die area for cross-pointarchitecture in accordance with various embodiments of the presentdisclosure. The access operation manager 1715 may be an example ofembodiments of an access operation manager 1815 described with referenceto FIGS. 15, 16, and 18. The access operation manager 1715 may includebiasing component 1720, timing component 1725, memory cell manager 1730,decoder manager 1735, access line manager 1740, and portion manager1745. Each of these modules may communicate, directly or indirectly,with one another (e.g., via one or more buses).

Memory cell manager 1730 may identify at least one cell of an array ofmemory cells that overlaps a boundary portion of a substrate layer,where the array is coupled to decoders of a core portion and theboundary portion via access lines, and where the substrate layerincludes a control circuit portion exclusive of decoders. Decodermanager 1735 may access the at least one cell using a decoder of theboundary portion.

Access line manager 1740 may be configured to manage access lines suchas row lines or column lines. In some cases, accessing the at least onecell includes: activating an access line coupled between the at leastone cell and a decoder of the boundary portion.

Portion manager 1745 may be configured to manage various parts of thememory device. In some cases, accessing the at least one cell includes:accessing a first portion of the array of memory cells that overlaps thecore portion of the substrate layer and accessing a second portion ofthe array of memory cells that overlaps the boundary portion of thesubstrate layer. In some cases, the core portion of the substrate layerincludes a set of sections each that include a common configuration ofcomponents. In some cases, the boundary portion of the substrate layerincludes a set of sections that each include a same configuration ofcomponents as other sections of the boundary portion, where the sectionsof the boundary portion have a different configuration of componentsfrom the sections of the core portion.

FIG. 18 shows a diagram of a system 1800 including a device 1805 thatsupports efficient utilization of die area for cross-point architecturein accordance with various embodiments of the present disclosure. Device1805 may be an example of or include the components of memory controller140 as described above, e.g., with reference to FIG. 1. Device 1805 mayinclude components for bi-directional voice and data communicationsincluding components for transmitting and receiving communications,including access operation manager 1815, memory cells 1820, basicinput/output system (BIOS) component 1825, processor 1830, I/Ocontroller 1835, and peripheral components 1840. These components may bein electronic communication via one or more busses (e.g., bus 1810).

Memory cells 1820 may store information (i.e., in the form of a logicalstate) as described herein. BIOS component 1825 be a software componentthat includes BIOS operated as firmware, which may initialize and runvarious hardware components. BIOS component 1825 may also manage dataflow between a processor and various other components, e.g., peripheralcomponents, input/output control component, etc. BIOS component 1825 mayinclude a program or software stored in read only memory (ROM), flashmemory, or any other non-volatile memory.

Processor 1830 may include an intelligent hardware device, (e.g., ageneral-purpose processor, a digital signal processor (DSP), a centralprocessing unit (CPU), a microcontroller, an application-specificintegrated circuit (ASIC), an field-programmable gate array (FPGA), aprogrammable logic device, a discrete gate or transistor logiccomponent, a discrete hardware component, or any combination thereof).In some cases, processor 1830 may be configured to operate a memoryarray using a memory controller. In other cases, a memory controller maybe integrated into processor 1830. Processor 1830 may be configured toexecute computer-readable instructions stored in a memory to performvarious functions (e.g., functions or tasks supporting reducing the diearea by removing boundaries in a quilt architecture).

I/O controller 1835 may manage input and output signals for device 1805.I/O controller 1835 may also manage peripherals not integrated intodevice 1805. In some cases, I/O controller 1835 may represent a physicalconnection or port to an external peripheral. In some cases, I/Ocontroller 1835 may utilize an operating system such as iOS®, ANDROID®,MS-DOS®, MS-WINDOWS®, OS/2®, UNIX®, LINUX®, or another known operatingsystem.

Peripheral components 1840 may include any input or output device, or aninterface for such devices. Examples may include disk controllers, soundcontroller, graphics controller, Ethernet controller, modem, universalserial bus (USB) controller, a serial or parallel port, or peripheralcard slots, such as peripheral component interconnect (PCI) oraccelerated graphics port (AGP) slots.

Input 1845 may represent a device or signal external to device 1805 thatprovides input to device 1805 or its components. This may include a userinterface or an interface with or between other devices. In some cases,input 1845 may be managed by I/O controller 1835, and may interact withdevice 1805 via a peripheral component 1840.

Output 1850 may also represent a device or signal external to device1805 configured to receive output from device 1805 or any of itscomponents. Examples of output 1850 may include a display, audiospeakers, a printing device, another processor or printed circuit board,etc. In some cases, output 1850 may be a peripheral element thatinterfaces with device 1805 via peripheral component(s) 1840. In somecases, output 1850 may be managed by I/O controller 1835.

The components of device 1805 may include circuitry designed to carryout their functions. This may include various circuit elements, forexample, conductive lines, transistors, capacitors, inductors,resistors, amplifiers, or other active or inactive elements, configuredto carry out the functions described herein. Device 1805 may be acomputer, a server, a laptop computer, a notebook computer, a tabletcomputer, a mobile phone, a wearable electronic device, a personalelectronic device, or the like. Or device 1805 may be a portion orelement of such a device.

FIG. 19 shows a flowchart illustrating a method 1900 that supportsefficient utilization of die area for cross-point architecture inaccordance with various embodiments of the present disclosure. Theoperations of method 1900 may be implemented by a memory controller 140or its components as described herein. For example, the operations ofmethod 1900 may be performed by an access operation manager as describedwith reference to FIGS. 16 through 18. In some examples, a memorycontroller 140 may execute a set of codes to control the functionalelements of the device to perform the functions described below.Additionally or alternatively, the memory controller 140 may performsome of the functions described below using special-purpose hardware.

In some cases, the method may also include identifying at least one cellof an array of memory cells that overlaps a boundary portion of asubstrate layer, wherein the array is coupled to decoders of a coreportion and the boundary portion via access lines, and wherein thesubstrate layer includes a control circuit portion exclusive ofdecoders. In some cases, the method may also include accessing the atleast one cell using a decoder of the boundary portion. In some cases,accessing the at least one cell comprises: activating an access linecoupled between the at least one cell and a decoder of the boundaryportion. In some cases, accessing the at least one cell comprises:accessing a first portion of the array of memory cells that overlaps thecore portion of the substrate layer and accessing a second portion ofthe array of memory cells that overlaps the boundary portion of thesubstrate layer. In some cases, the core portion of the substrate layercomprises a plurality of sections each that include a commonconfiguration of components. In some cases, the boundary portion of thesubstrate layer comprises a plurality of sections that each include asame configuration of components as other sections of the boundaryportion, wherein the sections of the boundary portion have a differentconfiguration of components from the sections of the core portion. Insome cases, accessing the at least one cell comprises: activating anaccess line coupled to the at least on cell and to the decoder of theboundary portion, the access line being shorter than an access linecoupled to a decoder of the core portion.

At block 1905 the memory controller 140 may identify at least one cellof an array of memory cells that overlaps a boundary portion of asubstrate layer, wherein the array is coupled to decoders of a coreportion and the boundary portion via access lines, and wherein thesubstrate layer includes a control circuit portion exclusive ofdecoders. The operations of block 1905 may be performed according to themethods described with reference to FIGS. 1 through 15. In certainexamples, embodiments of the operations of block 1905 may be performedby a memory cell manager as described with reference to FIGS. 16 through18.

At block 1910 the memory controller 140 may access the at least one cellusing a decoder of the boundary portion. The operations of block 1910may be performed according to the methods described with reference toFIGS. 1 through 15. In certain examples, embodiments of the operationsof block 1910 may be performed by a decoder manager as described withreference to FIGS. 16 through 18.

It should be noted that the methods described above describe possibleimplementations, and that the operations and the steps may be rearrangedor otherwise modified and that other implementations are possible.Furthermore, features or steps from two or more of the methods may becombined.

Information and signals described herein may be represented using any ofa variety of different technologies and techniques. For example, data,instructions, commands, information, signals, bits, symbols, and chipsthat may be referenced throughout the above description may berepresented by voltages, currents, electromagnetic waves, magneticfields or particles, optical fields or particles, or any combinationthereof. Some drawings may illustrate signals as a single signal;however, it will be understood by a person of ordinary skill in the artthat the signal may represent a bus of signals, where the bus may have avariety of bit widths.

As used herein, the term “virtual ground” refers to a node of anelectrical circuit that is held at a voltage of approximately zero volts(0V) but that is not directly connected with ground. Accordingly, thevoltage of a virtual ground may temporarily fluctuate and return toapproximately 0V at steady state. A virtual ground may be implementedusing various electronic circuit elements, such as a voltage dividerconsisting of operational amplifiers and resistors. Otherimplementations are also possible. “Virtual grounding” or “virtuallygrounded” means connected to approximately 0V.

The term “electronic communication” refers to a relationship betweencomponents that supports electron flow between the components. This mayinclude a direct connection between components or may includeintermediate components. Components in electronic communication may beactively exchanging electrons or signals (e.g., in an energized circuit)or may not be actively exchanging electrons or signals (e.g., in ade-energized circuit) but may be configured and operable to exchangeelectrons or signals upon a circuit being energized. By way of example,two components physically connected via a switch (e.g., a transistor)are in electronic communication regardless of the state of the switch(i.e., open or closed).

The term “isolated” refers to a relationship between components in whichelectrons are not presently capable of flowing between them; componentsare isolated from each other if there is an open circuit between them.For example, two components physically connected by a switch may beisolated from each other when the switch is open.

As used herein, the term “shorting” refers to a relationship betweencomponents in which a conductive path is established between thecomponents via the activation of a single intermediary component betweenthe two components in question. For example, a first component shortedto a second component may exchange electrons with the second componentwhen a switch between the two components is closed. Thus, shorting maybe a dynamic operation that enables the flow of charge betweencomponents (or lines) that are in electronic communication.

The devices discussed herein, including memory device 100, may be formedon a semiconductor substrate, such as silicon (Si), germanium,silicon-germanium alloy, gallium arsenide (GaAs), gallium nitride (GaN),etc. In some cases, the substrate is a semiconductor wafer. In othercases, the substrate may be a silicon-on-insulator (SOI) substrate, suchas silicon-on-glass (SOG) or silicon-on-sapphire (SOP), or epitaxiallayers of semiconductor materials on another substrate. The conductivityof the substrate, or sub-regions of the substrate, may be controlledthrough doping using various chemical species including, but not limitedto, phosphorous, boron, or arsenic. Doping may be performed during theinitial formation or growth of the substrate, by ion-implantation, or byany other doping means.

Chalcogenide materials may be materials or alloys that include at leastone of the elements S, Se, and Te. Phase change materials discussedherein may be chalcogenide materials. Chalcogenide materials may includealloys of S, Se, Te, Ge, As, Al, Sb, Au, indium (In), gallium (Ga), tin(Sn), bismuth (Bi), palladium (Pd), cobalt (Co), oxygen (O), silver(Ag), nickel (Ni), platinum (Pt). Example chalcogenide materials andalloys may include, but are not limited to, Ge—Te, In—Se, Sb—Te, Ga—Sb,In—Sb, As—Te, Al—Te, Ge—Sb—Te, Te—Ge—As, In—Sb—Te, Te—Sn—Se, Ge—Se—Ga,Bi—Se—Sb, Ga—Se—Te, Sn—Sb—Te, In—Sb—Ge, Te—Ge—Sb—S, Te—Ge—Sn—O,Te—Ge—Sn—Au, Pd—Te—Ge—Sn, In—Se—Ti—Co, Ge—Sb—Te—Pd, Ge—Sb—Te—Co,Sb—Te—Bi—Se, Ag—In—Sb—Te, Ge—Sb—Se—Te, Ge—Sn—Sb—Te, Ge—Te—Sn—Ni,Ge—Te—Sn—Pd, or Ge—Te—Sn—Pt. The hyphenated chemical compositionnotation, as used herein, indicates the elements included in aparticular compound or alloy and is intended to represent allstoichiometries involving the indicated elements. For example, Ge—Te mayinclude Ge_(x)Te_(y), where x and y may be any positive integer. Otherexamples of variable resistance materials may include binary metal oxidematerials or mixed valence oxide including two or more metals, e.g.,transition metals, alkaline earth metals, and/or rare earth metals.Embodiments are not limited to a particular variable resistance materialor materials associated with the memory components of the memory cells.For example, other examples of variable resistance materials can be usedto form memory components and may include chalcogenide materials,colossal magnetoresistive materials, or polymer-based materials, amongothers.

A transistor or transistors discussed herein may represent afield-effect transistor (FET) and comprise a three terminal deviceincluding a source, drain, and gate. The terminals may be connected toother electronic components through conductive materials, e.g., metals.The source and drain may be conductive and may comprise a heavily-doped,e.g., degenerate, semiconductor region. The source and drain may beseparated by a lightly-doped semiconductor region or channel. If thechannel is n-type (i.e., majority carriers are electrons), then the FETmay be referred to as a n-type FET. If the channel is p-type (i.e.,majority carriers are holes), then the FET may be referred to as ap-type FET. The channel may be capped by an insulating gate oxide. Thechannel conductivity may be controlled by applying a voltage to thegate. For example, applying a positive voltage or negative voltage to ann-type FET or a p-type FET, respectively, may result in the channelbecoming conductive. A transistor may be “on” or “activated” when avoltage greater than or equal to the transistor's threshold voltage isapplied to the transistor gate. The transistor may be “off” or“deactivated” when a voltage less than the transistor's thresholdvoltage is applied to the transistor gate.

The description set forth herein, in connection with the appendeddrawings, describes example configurations and does not represent allthe examples that may be implemented or that are within the scope of theclaims. The term “exemplary” used herein means “serving as an example,instance, or illustration,” and not “preferred” or “advantageous overother examples.” The detailed description includes specific details forthe purpose of providing an understanding of the described techniques.These techniques, however, may be practiced without these specificdetails. In some instances, well-known structures and devices are shownin block diagram form in order to avoid obscuring the concepts of thedescribed examples.

In the appended figures, similar components or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a dash and a secondlabel, such as a letter or number, that distinguishes among the similarcomponents. If just the first reference label is used in thespecification, the description is applicable to any one of the similarcomponents having the same first reference label irrespective of thesecond reference label.

Information and signals described herein may be represented using any ofa variety of different technologies and techniques. For example, data,instructions, commands, information, signals, bits, symbols, and chipsthat may be referenced throughout the above description may berepresented by voltages, currents, electromagnetic waves, magneticfields or particles, optical fields or particles, or any combinationthereof.

The various illustrative blocks and modules described in connection withthe disclosure herein may be implemented or performed with ageneral-purpose processor, a DSP, an ASIC, an FPGA or other programmablelogic device, discrete gate or transistor logic, discrete hardwarecomponents, or any combination thereof designed to perform the functionsdescribed herein. A general-purpose processor may be a microprocessor,but in the alternative, the processor may be any conventional processor,controller, microcontroller, or state machine. A processor may also beimplemented as a combination of computing devices (e.g., a combinationof a digital signal processor (DSP) and a microprocessor, multiplemicroprocessors, one or more microprocessors in conjunction with a DSPcore, or any other such configuration).

The functions described herein may be implemented in hardware, softwareexecuted by a processor, firmware, or any combination thereof. Ifimplemented in software executed by a processor, the functions may bestored on or transmitted over as one or more instructions or code on acomputer-readable medium. Other examples and implementations are withinthe scope of the disclosure and appended claims. For example, due to thenature of software, functions described above can be implemented usingsoftware executed by a processor, hardware, firmware, hardwiring, orcombinations of any of these. Features implementing functions may alsobe physically located at various positions, including being distributedsuch that portions of functions are implemented at different physicallocations. Also, as used herein, including in the claims, “or” as usedin a list of items (for example, a list of items prefaced by a phrasesuch as “at least one of” or “one or more of”) indicates an inclusivelist such that, for example, a list of at least one of A, B, or C meansA or B or C or AB or AC or BC or ABC (i.e., A and B and C). Also, asused herein, the phrase “based on” shall not be construed as a referenceto a closed set of conditions. For example, an exemplary step that isdescribed as “based on condition A” may be based on both a condition Aand a condition B without departing from the scope of the presentdisclosure. In other words, as used herein, the phrase “based on” shallbe construed in the same manner as the phrase “based at least in parton.”

Computer-readable media includes both non-transitory computer storagemedia and communication media including any medium that facilitatestransfer of a computer program from one place to another. Anon-transitory storage medium may be any available medium that can beaccessed by a general purpose or special purpose computer. By way ofexample, and not limitation, non-transitory computer-readable media cancomprise RAM, ROM, electrically erasable programmable read only memory(EEPROM), compact disk (CD) ROM or other optical disk storage, magneticdisk storage or other magnetic storage devices, or any othernon-transitory medium that can be used to carry or store desired programcode means in the form of instructions or data structures and that canbe accessed by a general-purpose or special-purpose computer, or ageneral-purpose or special-purpose processor. Also, any connection isproperly termed a computer-readable medium. For example, if the softwareis transmitted from a website, server, or other remote source using acoaxial cable, fiber optic cable, twisted pair, digital subscriber line(DSL), or wireless technologies such as infrared, radio, and microwave,then the coaxial cable, fiber optic cable, twisted pair, digitalsubscriber line (DSL), or wireless technologies such as infrared, radio,and microwave are included in the definition of medium. Disk and disc,as used herein, include CD, laser disc, optical disc, digital versatiledisc (DVD), floppy disk and Blu-ray disc where disks usually reproducedata magnetically, while discs reproduce data optically with lasers.Combinations of the above are also included within the scope ofcomputer-readable media.

The description herein is provided to enable a person skilled in the artto make or use the disclosure. Various modifications to the disclosurewill be readily apparent to those skilled in the art, and the genericprinciples defined herein may be applied to other variations withoutdeparting from the scope of the disclosure. Thus, the disclosure is notlimited to the examples and designs described herein, but is to beaccorded the broadest scope consistent with the principles and novelfeatures disclosed herein.

What is claimed is:
 1. An electronic memory device, comprising: asubstrate layer that comprises a core portion, a boundary portion, and acontrol circuit portion, wherein the core portion includes a firstplurality of decoders having a first configuration, the boundary portionincludes a second plurality of decoders having a second configurationdifferent from the first configuration, and the control circuit portionis exclusive of decoders; and an array of memory cells that overlaps thecore portion and at least a part of the boundary portion of thesubstrate layer, wherein memory cells of the array are coupled with thefirst plurality of decoders and the second plurality of decoders via aplurality of access lines.
 2. The device of claim 1, wherein: the secondplurality of decoders includes a plurality of column decoders.
 3. Thedevice of claim 2, wherein: the column decoders are associated withmemory cells of the array that overlap the boundary portion.
 4. Thedevice of claim 2, wherein: the second plurality of decoders includes aplurality of row decoders.
 5. The device of claim 1, further comprising:at least one decoder of the first plurality of decoders is coupled witha memory cell of the array of memory cells that overlaps the boundaryportion.
 6. The device of claim 1, further comprising: at least onedecoder of the second plurality of decoders is coupled with a memorycell of the array that overlaps the boundary portion.
 7. The device ofclaim 1, wherein: the core portion of the substrate layer comprises aplurality of sections that each include a common configuration ofcomponents.
 8. The device of claim 7, wherein: the boundary portioncomprises a plurality of sections that each include a same configurationas other sections of the boundary portion, wherein the sections of theboundary portion have a different configuration from the sections of thecore portion.
 9. The device of claim 8, further comprising: each sectionof the core portion is defined by a first dimension in a first directionand a second dimension in a second direction that is orthogonal to thefirst direction; and each section of the boundary portion is defined bya third dimension in the first direction and a fourth dimension in thesecond direction, wherein the third dimension is less than the firstdimension and the fourth dimension is equal to the second dimension. 10.The device of claim 8, further comprising: at least one section of theboundary portion includes a first number of decoders that is less than asecond number of decoders included in at least one section the coreportion.
 11. The device of claim 10, wherein: the first number ofdecoders is less than half of the second number of decoders.
 12. Thedevice of claim 1, wherein: the array of memory cells includes at leasttwo decks of memory cells, a first deck of memory cells positioned overthe core portion and the boundary portion and a second deck of memorycells positioned over the first deck of memory cells.
 13. The device ofclaim 1, wherein: the core portion and the boundary portion comprise aCMOS under array (CuA).
 14. The device of claim 1, wherein: the controlcircuit portion is exclusive of row decoders and column decoders.
 15. Anelectronic memory device, comprising: a substrate layer that comprises acore portion, a boundary portion, and a control circuit portion, whereinthe core portion includes a first plurality of decoders having a firstconfiguration, the boundary portion includes a second plurality ofdecoders having a second configuration different from the firstconfiguration, and the control circuit portion is exclusive of decoders,wherein the core portion comprises a first border and a second borderpositioned opposite the first border, the first border defining a firstboundary between the core portion and the control circuit portion andthe second border defining a second boundary between the core portionand the boundary portion; and an array of memory cells including a firstsubset of memory cells positioned over the core portion of the substratelayer and a second subset of memory cells positioned over the boundaryportion of the substrate layer, wherein the first subset of memory cellsare coupled with the first plurality of decoders and the second subsetof memory cells are coupled with the second plurality of decoders via aplurality of access lines.
 16. The device of claim 15, wherein: the coreportion further comprises: a third border defining a third boundarybetween the core portion and the control circuit portion; and the devicefurther comprising a fourth border positioned opposite the third border,the fourth border defining a fourth boundary between the core portionand the control circuit portion.
 17. The device of claim 15, furthercomprising: a subset of access lines extends across the second boundarydefined by the second border of the core portion, wherein the subset ofaccess lines is coupled with the second subset of memory cells.
 18. Thedevice of claim 15, further comprising: at least one of the secondplurality of decoders is configured to access a memory cell of thesecond subset of memory cells.
 19. The device of claim 15, furthercomprising: at least one of the first plurality of decoders isconfigured to access a memory cell of the second subset of memory cells.20. The device of claim 15, wherein: the core portion of the substratelayer comprises a plurality of sections that each include a commonconfiguration of components.
 21. The device of claim 15, wherein: theboundary portion comprises a first boundary border cooperating with thesecond border of the core portion to define the second boundary betweenthe boundary portion and the core portion and a second boundary borderpositioned opposite the first boundary border, the second boundaryborder defining a third boundary between the boundary portion and thecontrol circuit portion.
 22. The device of claim 21, further comprising:a plurality of column decoders positioned between each row decoder ofthe second plurality of decoders and the second boundary border.
 23. Thedevice of claim 15, further comprising: a first subset of access linesterminate at the first border and define a first length less than asecond length of a second subset of access lines.
 24. The device ofclaim 15, further comprising: a third subset of access lines arepositioned in the boundary portion, each access line of the third subsetof access lines terminating at the control circuit portion.
 25. Thedevice of claim 15, wherein: an active memory cell in the array ofmemory cells is coupled to a first access line and a second access lineextending perpendicular to the first access line.
 26. An electronicmemory device, comprising: a substrate layer that comprises a coreportion, a boundary portion, and a control circuit portion, wherein thecore portion includes a first plurality of decoders having a firstconfiguration, the boundary portion includes a second plurality ofdecoders having a second configuration different from the firstconfiguration and the boundary portion comprises a plurality of columndecoders, and the control circuit portion is exclusive of decoders; andan array of memory cells positioned over at least the core portion ofthe substrate layer, wherein memory cells of the array of memory cellsare coupled with the first plurality of decoders and the secondplurality of decoders via a plurality of access lines.
 27. The device ofclaim 26, wherein: the column decoders are configured to assist inaccessing memory cells positioned over the boundary portion.
 28. Thedevice of claim 27, further comprising: a subset of the array of memorycells positioned over the boundary portion of the substrate layer, andwherein the column decoders are coupled to the subset of the array ofmemory cells positioned over the boundary portion.
 29. An electronicmemory device, comprising: a substrate layer that comprises a coreportion, a boundary portion, and a control circuit portion, wherein thecore portion includes a first plurality of decoders having a firstconfiguration, the boundary portion includes a second plurality ofdecoders having a second configuration different from the firstconfiguration, and the control circuit portion is exclusive of decoders;an array of memory cells that overlaps the core portion and at least apart of the boundary portion of the substrate layer, wherein memorycells of the array are coupled with the first plurality of decoders andthe second plurality of decoders via a plurality of access lines; acontroller in electronic communication with the substrate layer and thearray of memory cells, wherein the controller is operable to: identify aregion of the array of memory cells to access during an accessoperation; determine that the identified region of the array of memorycells includes memory cells positioned over the boundary portion of thesubstrate layer; and execute the access operation on the memory cellsthat are part of the identified region and are positioned over theboundary portion of the substrate layer based at least in part on thedetermination using decoders of the first plurality or the secondplurality.
 30. A method, comprising: identifying at least one cell of anarray of memory cells that overlaps a boundary portion of a substratelayer, wherein the array is coupled to decoders of a core portion andthe boundary portion via access lines, and wherein the substrate layerincludes a control circuit portion exclusive of decoders; and accessingthe at least one cell using a decoder of the boundary portion.
 31. Themethod of claim 30, wherein: accessing the at least one cell comprises:activating an access line coupled between the at least one cell and adecoder of the boundary portion.
 32. The method of claim 30, wherein:accessing the at least one cell comprises: accessing a first portion ofthe array of memory cells that overlaps the core portion of thesubstrate layer and accessing a second portion of the array of memorycells that overlaps the boundary portion of the substrate layer.
 33. Themethod of claim 30, wherein: the core portion of the substrate layercomprises a plurality of sections each that include a commonconfiguration of components.
 34. The method of claim 30, wherein: theboundary portion of the substrate layer comprises a plurality ofsections that each include a same configuration of components as othersections of the boundary portion, wherein the sections of the boundaryportion have a different configuration of components from the sectionsof the core portion.
 35. The method of claim 30, wherein: accessing theat least one cell comprises: activating an access line coupled to the atleast on cell and to the decoder of the boundary portion, the accessline being shorter than an access line coupled to a decoder of the coreportion.